GSMCentrum.CZ » Elektronické součástky » Tranzistory » IGBT Tranzistory
| Centrální sklad i | 15 ks |
|---|---|
| Čárový kód: | |
| Identifikátor zboží: | TMEGD15PJY120L2S |
| Balení: | |
| Minimální množství: | 1 |
| Výrobce: | STARPOWER SEMICONDUCTOR LTD. |
Module IGBT diode/transistor boost chopper Urmax 1200V L2.2 - Popis produktu
| Manufacturer | STARPOWER SEMICONDUCTOR LTD. |
|---|---|
| Type of module | IGBT |
| Semiconductor structure | diode/transistor |
| Topology | boost chopper |
| Topology | IGBT three-phase bridge OE output |
| Topology | NTC thermistor |
| Topology | three-phase diode bridge |
| Max. off-state voltage | 1200V |
| Collector current | 15A |
| Case | L2.2 |
| Electrical mounting | Press-in PCB |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 30A |
| Technology | Advanced Trench FS IGBT |
| Mechanical mounting | screw |